In-situ X-ray reflectivity study of alkane films grown from the vapor phase

被引:16
作者
Basu, S. [1 ]
Satija, S. K.
机构
[1] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA
[2] SUNY Stony Brook, Dept Mat Sci & Engn, Stony Brook, NY 11794 USA
关键词
D O I
10.1021/la062517f
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We carried out in-situ X-ray reflectivity study of nine n-alkane chains (CnH2n+2) on Si substrate, n in the range of 17-30. These films formed under vacuum at equilibrium vapor pressure of the respective alkane molecule. For all the alkanes studied we found a bilayer structure on the substrate, a higher density vertical layer at the air-film interface with the layer thickness equal to the all-trans length of the respective molecule, and a lower density layer below it with the molecules lying horizontal on the substrate. This model was earlier proposed for C32 films on Si by Volkmann et al.(11) We observe that this model can fit the entire range of data from C17 to C30 in our experiments.
引用
收藏
页码:8331 / 8335
页数:5
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