Dynamic switching of tunnel junction MRAM cell with nanosecond field pulses

被引：5

作者：

Sousa, RC

Freitas, PP

机构：

[1] INESC, P-1000 Lisbon, Portugal

[2] Univ Tecn Lisboa, Dept Phys, Inst Super Tecn, P-1096 Lisbon, Portugal

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2000年 / 36卷 / 05期

关键词：

MRAM; magnetic tunnel junctions; magnetization reversal;

D O I：

10.1109/20.908585

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Spin dependent tunnel junctions aimed for storage element in MRAM cells were switched between low and high resistance states using 20 ns current pulses on two perpendicular conductors. Switching was done in quasi static mode using an external field and dynamically with field pulses created on chip. For 20 ns pulsewidths the introduction of a delay between the two pulses promotes the switching at lower fields and reduces the dispersion in remanent resistance values after switching.

引用

页码：2770 / 2772

页数：3

共 6 条

[1] Magnetization reversal in micron-sized magnetic thin films [J].