Defect structure of quenched γ-BINIVOX

被引:28
作者
Abrahams, I
Nelstrop, JAG
Krok, F
Bogusz, W
机构
[1] Univ London, Univ London Queen Mary & Westfield Coll, Dept Chem, Struct Chem Grp, London E1 4NS, England
[2] Warsaw Univ Technol, Inst Phys, PL-00662 Warsaw, Poland
关键词
oxide ion conductor; BINIVOX; BIMEVOX; crystal structure; neutron diffraction;
D O I
10.1016/S0167-2738(98)00124-6
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The defect structure of gamma-Bi(2)V(0.9)Ni(0.1)O(5.35) (BINIVOX, x = 0.10) quenched from high temperature has been refined using X-ray and neutron powder diffraction data. The defect structure shows that oxide ion vacancies are exclusive to the equatorial positions around the Ni/V atom. Consideration of site occupancies, inter-site contact distances, and geometrical constraints yields two likely coordination environments for V/Ni, i.e. distorted tetrahedral and distorted octahedral. The percentage of V/Ni sites that are distorted tetrahedra may be calculated as 68% with the remainder as distorted octahedra. (C) 1998 Elsevier Science B.V. All rights reserved.
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页码:95 / 101
页数:7
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