Excitation gaps in the fractional quantum Hall effect in tetracene

被引:6
作者
Schön, JH
Kloc, C
Batlogg, B
机构
[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
[2] ETH Honggerberg, Solid State Phys Lab, CH-8093 Zurich, Switzerland
关键词
D O I
10.1088/0953-8984/13/7/101
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We have measured the temperature dependence of the fractional quantum Hall effect at filling factors v = 1/3, 2/3, and 2/5 in tetracene in order to determine the associated excitation gaps. The stronger two-dimensional confinement of the hole gas compared to conventional inorganic semiconductors as well as the strong electron-electron interactions result in larger excitation gaps. As a result, the fractional quantum Hall effect is observable at moderately high temperatures. An excitation gap of 24 K at 9 T is estimated for v = 1/3.
引用
收藏
页码:L163 / L167
页数:5
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