Stress evolution during growth of sputtered Ni/Cu multilayers
被引:6
作者:
Ramaswamy, V
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机构:
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Ramaswamy, V
[1
]
Clemens, BM
论文数: 0引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Clemens, BM
[1
]
Nix, WD
论文数: 0引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Nix, WD
[1
]
机构:
[1] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
来源:
MECHANISMS AND PRINCIPLES OF EPITAXIAL GROWTH IN METALLIC SYSTEMS
|
1998年
/
528卷
关键词:
D O I:
10.1557/PROC-528-161
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
Results from in-situ measurements of stress during growth of (111)-textured Ni/Cu multilayers with small and large bilayer periods are presented. In multilayers with small bilayer periods, Ni is in uniform tension and Cu in uniform compression. This behavior is modeled as the growth of a coherent multilayer with alloying in the layers. In multilayers with large bilayer periods, stress relaxation is observed but the measured stresses are much lower than expected based on a Mathews-Blakeslee relaxation process. An alternative stress relaxation mechanism based on high defect densities is presented and discussed.