A study of substrate variation effects on the properties of n-CdSe0.7Te0.3 thin film polysulphide photoelectrochemical solar cells

被引：18

作者：

Das, VD ^{[1
]}

Damodare, L ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Phys, Thin Film Lab, Madras 600036, Chennai, India

来源：

MATERIALS CHEMISTRY AND PHYSICS | 1998年 / 56卷 / 01期

关键词：

photoelectrochemical cells; solar cells; substrate variation; chalcogenides;

D O I：

10.1016/S0254-0584(98)00138-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of substrate on the working of n-CdSe0.7Te0.3 thin-film/polysulphide photoelectrochemical (PEC) solar cells has been investigated in detail. The role of substrates like stainless steel and In2O3-predeposited glass slides on the Mott-Schottky plots is investigated at various frequencies for various surface treatments using both types of substrates and the reasons for the dispersion observed have been explained. The variation of space-charge capacitance (at a fixed electrode potential) as a function of frequency has been investigated and also the power law governing the capacitance dependence. The improvement in the power output characteristics on annealing and photoelectrochemical etching occurs due to the reduction of surface states, leading to a decrease in trap states. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：48 / 55

页数：8

共 28 条

[1]

BOCKRIS JO, 1977, MODERN ELECTROCHEMIS, pCH7

[2]

COUTTS TJ, 1978, SOLAR ENERGY MAT, V50, P99

[3] Effect of surface treatment on an n-CdSe0.6Te0.4 thin-film photoanode/polysulphide electrolyte solar cell [J].

Das, VD ;

Damodare, L .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (03) :1522-1530

[4] Optical and electrical investigations of indium oxide thin films prepared by thermal oxidation of indium thin films [J].

Das, VD ;

Kirupavathy, S ;

Damodare, L ;

Lakshminarayan, N .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (11) :8521-8530

[5] A study of band-bending and barrier height variation in thin film n-CdSe0.5Te0.5 photoanode/polysulphide junctions [J].

Das, VD ;

Damodare, L .

SOLID STATE COMMUNICATIONS, 1996, 99 (10) :723-728

[6]

Das VD, 1998, JPN J APPL PHYS 1, V37, P1897

[7]

DAS VD, 1996, PVSEC 9 MIYAZ JAP, P441

[8]

FINKLEA HO, 1982, J ELECTROCHEM SOC, V129, P2219

[9]

FREDLEIN RA, 1979, J ELECTROCHEM SOC, V126, P892

[10] Impedance spectroscopy at semiconductor electrodes: Review and recent developments [J].

Gomes, WP ;

Vanmaekelbergh, D .

ELECTROCHIMICA ACTA, 1996, 41 (7-8) :967-973

← 1 2 3 →