An atom-resolved view of silicon nanoclusters

被引：18

作者：

McComb, DW ^{[1
]}

Collings, BA ^{[1
]}

Wolkow, RA ^{[1
]}

Moffatt, DJ ^{[1
]}

MacPherson, CD ^{[1
]}

Rayner, DM ^{[1
]}

Hackett, PA ^{[1
]}

Hulse, JE ^{[1
]}

机构：

[1] NATL RES COUNCIL CANADA,STEACIE INST MOLEC SCI,OTTAWA,ON K1A 0R6,CANADA

来源：

CHEMICAL PHYSICS LETTERS | 1996年 / 251卷 / 1-2期

关键词：

D O I：

10.1016/0009-2614(96)00068-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Atomically resolved scanning tunneling microscope images of Si clusters deposited onto a Si(111)-7 x 7 substrate have been obtained. The clusters display a capping layer of widely spaced surface atoms analogous to the reconstructed surface of a bulk crystal. Site-specific variations in the electronic characteristics of cluster surface atoms are detected. Adsorption studies demonstrate size dependant reactivity of deposited clusters. Clusters are observed to collapse upon annealing to form epitaxial Si islands.

引用

页码：8 / 12

页数：5

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