Shape dependence of the switching field in small structures

被引:8
作者
Chui, ST [1 ]
机构
[1] Univ Delaware, Bartol Res Inst, Newark, DE 19716 USA
关键词
D O I
10.1109/20.706337
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
For small structures, the switching behaviour is controlled by the edge domains. In one scenario, the edge domains move inside the sample and annihilate each other. We show by results from Monte Carlo simulation that the energy change consists of a domain wall bending energy and a dipolar contribution which now is two dimensional. As a result the switching field is not a simple function of the aspect ratio alone. This differs from the bulk shape anisotropy effect which is mainly from the dipolar contribution.
引用
收藏
页码:1000 / 1002
页数:3
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