Sprayed films of stannite Cu2ZnSnS4

被引：296

作者：

Nakayama, N ^{[1
]}

Ito, K ^{[1
]}

机构：

[1] SHINSHU UNIV,FAC ENGN,DEPT ELECT & ELECTR ENGN,NAGANO 380,JAPAN

来源：

APPLIED SURFACE SCIENCE | 1996年 / 92卷

关键词：

D O I：

10.1016/0169-4332(95)00225-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A stoichiometric Cu2ZnSnS4 film with the stannite structure and resistivity of 2x10(2) Omega . cm has been prepared by annealing polycrystalline quaternary films at 550 degrees C, which are spray-deposited on glass substrates, in an argon gas flow containing H2S. Non-stoichiometric films consisting mostly of the stannite phase exhibit p-type conduction. Their resistivity decreases steeply as the ratio of copper to another metal increases. A copper-rich film tends to contain an impurity phase of chalcocite while a zinc-lean film that of copper tin sulfide Cu2SnS3.

引用

页码：171 / 175

页数：5

共 6 条

[1]

[Anonymous], P 4 INT C PHOT SCI E

[2] PREPARATION AND CHARACTERIZATION OF VACUUM-DEPOSITED CUINSE2 THIN-FILMS [J].

DHERE, NG ;

LOURENCO, MC ;

DHERE, RG ;

KAZMERSKI, LL .

SOLAR CELLS, 1986, 16 (1-4) :369-380

[3]

GROVENOR CRM, 1989, MICROELECTRONIC MAT, P475

[4] ELECTRICAL AND OPTICAL-PROPERTIES OF STANNITE-TYPE QUATERNARY SEMICONDUCTOR THIN-FILMS [J].

ITO, K ;

NAKAZAWA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (11) :2094-2097

[5] PREPARATION AND PROPERTIES OF CUINS2 THIN-FILMS [J].

OGAWA, Y ;

UENISHI, S ;

TOHYAMA, K ;

ITO, K .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1994, 35 (1-4) :157-163

[6] TETRAHEDRAL QUATERNARY CHALCOGENIDES OF TYPE CU2-II-IV-S4(SE4) [J].

SCHAFER, W ;

NITSCHE, R .

MATERIALS RESEARCH BULLETIN, 1974, 9 (05) :645-654

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