Tailoring the dielectric properties of HfO2-Ta2O5 nanolaminates

被引：202

作者：

Kukli, K ^{[1
]}

Ihanus, J ^{[1
]}

Ritala, M ^{[1
]}

Leskela, M ^{[1
]}

机构：

[1] TARTU STATE UNIV,INST MAT SCI,EE-2400 TARTU,ESTONIA

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 26期

关键词：

D O I：

10.1063/1.115990

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Dielectric thin films applicable, for instance, as insulating layers in electroluminescent display devices have been studied. In order to improve dielectric characteristics HfO2-Ta2O5 nanolaminates were prepared by atomic layer epitaxy at 325 degrees C. The nanolaminates were evaluated in capacitance and current-voltage measurements. By optimizing the layer thicknesses in the nanolaminate structures the dielectric properties, especially leakage current densities, could be tailored remarkably. The best nanolaminates showed charge storage factors improved up to 8 times when compared with those of the single oxide films. The presence of nanosize crystallites of monoclinic and metastable tetragonal HfO2 was observed by x-ray diffraction analysis. (C) 1996 American Institute of Physics.

引用

页码：3737 / 3739

页数：3

共 18 条

[1]

DIELECTRICS IN MICROELECTRONICS - PROBLEMS AND PERSPECTIVES [J].