Textured growth of multi-layered buffer layers on Ni tape by sol-gel process

Textured Cerium Oxide (CeO2)/Yttrium-Stabilized Zirconia (YSZ)/CeO2 buffer layers structure were grown by sol-gel dip coating process on bi-axially textured Ni tapes for processing of YBCO coated conductors. CeO2/YSZ/CeO2 buffer layer structure has been demonstrated by vacuum techniques, but first time textured CeO2/YSZ/CeO2 structure were grown by sol-gel on biaxially textured Ni tape. The buffer layer structure promoted c-axis oriented sol-gel YBCO films and prevented oxidation of nickel during YBCO processing. After each layer was coated, the layer was annealed. CeO2 layers were annealed at 950degreesC for 30 min. and YSZ layers were annealed at 1150degreesC for 10 min. under 4% H-2-Ar gas flow. Texture analysis of Ni substrates and bottom CeO2 were done by Philips diffractometer. Sol-gel YBCO layers were coated on CeO2/YSZ/CeO2 structure and critical current density was about 0.5 x 10(5) A/cm(2). Microstructure of the buffer layer was investigated by Environmental Scanning Electron Microscope (ESEM).