SiC-based gas sensor development

被引：46

作者：

Hunter, GW ^{[1
]}

Neudeck, PG

Gray, M

Androjna, D

Chen, LY

Hoffman, RW

Liu, CC

Wu, QH

机构：

[1] NASA, Glenn Res Ctr, Cleveland, OH 44135 USA

[2] Corez, Cleveland, OH 44135 USA

[3] Ayt Corp, NASA, Glenn Res Ctr, Cleveland, OH 44135 USA

[4] Ohio Aerosp Inst, Cleveland, OH 44142 USA

[5] Case Western Reserve Univ, Ctr Elect Design, Cleveland, OH 44106 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

electronic nose; emission; gas; high temperature; hydrocarbon; packaging; sensor;

D O I：

10.4028/www.scientific.net/MSF.338-342.1439

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon carbide based Schottky diode gas sensors are being developed for applications such as emission measurements and leak detection. The effects of the geometry of the tin oxide film in a Pd/SnO2/SiC structure will be discussed as well as improvements in packaging SiC-based sensors. It is concluded that there is considerable versatility in the formation of SiC-based Schottky diode gas sensing structures which will potentially allow the fabrication of a SiC-based gas sensor array for a variety of gases and temperatures.

引用

页码：1439 / 1442

页数：4