1200V-trench-IGBT study with square short circuit SOA

被引：44

作者：

Laska, T ^{[1
]}

Pfirsch, F ^{[1
]}

Hirler, F ^{[1
]}

Niedermeyr, J ^{[1
]}

Schaffer, C ^{[1
]}

Schmidt, T ^{[1
]}

机构：

[1] Siemens AG, D-81541 Munchen, Germany

来源：

ISPSD '98 - PROCEEDINGS OF THE 10TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 1998年

关键词：

D O I：

10.1109/ISPSD.1998.702738

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the authors discuss the way to a new 1200V trench IGBT structure. The combination of well designed trench cell geometry and a favourably adjusted vertical carrier concentration profile leads to a trench IGBT chip with both low static and dynamic losses and a degree of ruggedness similar to state of the art planar cell NPT IGBTs, especially excellent gate oxide properties, high turn-off capability and a square short circuit safe operating area up to 1200V.

引用

页码：433 / 436

页数：4