Hydrogenated amorphous silicon thin-film transistor arrays fabricated by digital lithography

被引：46

作者：

Wong, WS ^{[1
]}

Ready, SE ^{[1
]}

Lu, JP ^{[1
]}

Street, RA ^{[1
]}

机构：

[1] Palo Alto Res Ctr, Palo Alto, CA 94304 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 09期

关键词：

active-matrix arrays; amorphous silicon; jet printing; thin-film transistor (TFT);

D O I：

10.1109/LED.2003.815939

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A jet-printed digital-lithographic method, in place of conventional photolithography, was used to fabricate 64 x 64 pixel (300 mum pitch) matrix addressing thin-film transistor (TFT) arrays. The average hydrogenated amorphous silicon TFT device within an array had a threshold voltage of similar to3.5 V, carrier mobility of 0.7 cm(2)/V.s, subthreshold slope of 0.76 V/decade, and an on/off ratio of 10(8).

引用

收藏

页码：577 / 579

页数：3

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