Shape universality of equilibrated silicon crystals

被引:31
作者
Bermond, JM
Metois, JJ
Heyraud, JC
Floret, F
机构
[1] CNRS, CRMC2, F-13288 Marseille 09, France
[2] Univ Aix Marseille 3, Lab DSO, Fac Sci & Tech St Jerome, F-13297 Marseille, France
[3] Univ Aix Marseille 1, Marseille, France
关键词
reflection electron microscopy; scanning electron reflection; silicon; surface energy; vicinal single crystal surfaces;
D O I
10.1016/S0039-6028(98)00599-8
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In order to check the Prokowski-Talapov (P-T) universality class behaviour, the profiles of equilibrated silicon crystals have been studied in the vicinity of a (111) facet at 900 degrees C. The equilibrium shapes of three-dimensional (3D) or two-dimensional (2D) crystals have been produced by thermally equilibrating either an array of small silicon columns on a silicon substrate or a grating of silicon ridges. The samples have been observed either ex situ, by high-resolution SEM, or in situ by TEM and REM. The profiles have been measured along a (high symmetry) <110> zone, toward (110), within the angular domain 3-17 degrees. For smaller angles (0-1.5 degrees away from [111]) the profile has been reconstructed via the visualisation of steps by REM. The theoretical prediction of a 3/2 power law for the profile equation has been checked. The results are at variance with those obtained for metals. Within the angular domain 3-17 degrees, the profile is compatible with a 3/2 power law. From the profile equation, the step interaction constant can be determined (0.36+/-0.09 J m(-2) at 900 degrees C), in good agreement with previous experiments on the terrace width distributions. No difference can be detected between 3D and 2D crystals. All this is the signature of a P-K behaviour, only involving repulsive 1/x(2) step interactions, again in agreement with previous studies. However, at small angles (0-1.5 degrees), no physically reasonable law can be assigned to the profile. This behaviour is not understood at present. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:430 / 447
页数:18
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