Encapsulation of Ag films on SiO2 by Ti reactions using Ag-Ti alloy/bilayer structures and an NH3 ambient

Thin encapsulated silver films have been prepared on oxidized silicon by nitridation of similar to 200-nm-thick Ag-19 at. % Ti alloy films and Ag(120 nm)/Ti(22 nm) at 300-700 degrees C in an ammonia ambient. The encapsulation process has been studied in detail by Rutherford backscattering, and scanning Auger and secondary-ion-mass spectrometry, which showed that Ti-nitride and Ti-oxide-silicide formation take place at the surface and the Ag-Ti/SiO2 interface, respectively. Four-point-probe analysis of the alloy films suggests that the resistivity is controlled by the residual Ti;concentration. Resistivity values of similar to 4 mu Omega cm were measured in encapsulated Ag alloy films with initial low Ti concentrations. The annealed bilayer structure had minimal Ti accumulations in Ag and the resistivity values were comparable to that of the as-deposited Ag (similar to 3 mu Omega cm). (C) 1996 American Institute of Physics.