Direct evidence for implanted Fe on substitutional Ga sites in GaN

被引：19

作者：

Wahl, U

Vantomme, A

Langouche, G

Correia, JG

Peralta, L

机构：

[1] Univ Louvain, Inst Kern & Stralingsfys, B-3001 Louvain, Belgium

[2] ITN, P-2685 Sacavem, Portugal

[3] CERN, EP, CH-1211 Geneva, Switzerland

[4] LIP, P-1000149 Lisbon, Portugal

[5] FCUL, P-1000149 Lisbon, Portugal

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 21期

关键词：

D O I：

10.1063/1.1372201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The lattice location of iron in thin-film, single-crystalline hexagonal GaN was studied by means of the emission channeling technique. Following 60 keV room temperature implantation of the precursor isotope Mn-59 at a dose of 1.0x10(13) cm(-2) and annealing up to 900 degreesC, the angular distribution of beta (-) particles emitted by the radioactive isotope Fe-59 was measured by a position-sensitive electron detector. The beta (-) emission patterns around the [0001], [(1) under bar 102], [(1) under bar 101], and [(2) under bar 113] directions give direct evidence that the majority of Fe (80%) occupies substitutional Ga sites. (C) 2001 American Institute of Physics.

引用

页码：3217 / 3219

页数：3

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