Microstructural characterization of ultrarapid quenched bismuth and antimony tellurides alloys

被引:12
作者
Koukharenko, E
Fréty, N
Shepelevich, VG
Tedenac, JC
机构
[1] Univ Montpellier 2, UMR 5617, LPMC, F-34095 Montpellier 5, France
[2] Belarusian State Univ, Dept Phys, Minsk 220080, BELARUS
关键词
ultrarapid quenching; microstructure; bismuth; tellurium; strontium; thermoelectric;
D O I
10.1016/S0022-0248(00)00996-9
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Bi2-xSbxTe3 alloys were fabricated using the ultrarapid quenching process route, the quenching rate bring of 10(6) K/s. The materials were obtained in the shape of foils with a thickness varying from 10 to 60 mum. The microstructural study evidenced a fine grain microstructure with a grain size of tens to hundreds nanometers. Chemical analyses showed that the stoechiometric composition was observed from 4 to 5 mum from the surface and the chemical composition was homogeneous along the foil surface. A crystalline texture was observed in the (2 0 (2) over bar 5) planes for Bi-rich alloys. Another preferential crystalline orientation is observed in the (1 1 (2) over bar 0)planes for Sb-rich alloys but the texture is then obvious for the highest quenching temperature. This fine grain microstructure associated to the chemical homogeneity makes the ultrarapid quenching process a promising route for thermoelectric materials elaboration. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:773 / 778
页数:6
相关论文
共 11 条
[1]   REFINEMENT OF SB2TE3 AND SB2TE2SE STRUCTURES AND THEIR RELATIONSHIP TO NONSTOICHIOMETRIC SB2TE3-YSEY COMPOUNDS [J].
ANDERSON, TL ;
KRAUSE, HB .
ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE, 1974, 30 (MAY15) :1307-1310
[2]   CRYSTAL GROWTH + ORIENTATION IN SPUTTERED FILMS OF BISMUTH TELLURIDE [J].
FRANCOMBE, MH .
PHILOSOPHICAL MAGAZINE, 1964, 10 (108) :989-&
[3]  
Glazov VM, 1996, INORG MATER+, V32, P1277
[4]  
Goldsmid H. J., 1964, THERMOELECTRIC REFRI
[5]   THE USE OF SEMICONDUCTORS IN THERMOELECTRIC REFRIGERATION [J].
GOLDSMID, HJ ;
DOUGLAS, RW .
BRITISH JOURNAL OF APPLIED PHYSICS, 1954, 5 (NOV) :386-390
[6]  
Goltsman B. M., 1972, SEMICONDUCTING THERM, P320
[7]   Microstructural study of Bi2Te3 material obtained by ultrarapid quenching process route [J].
Koukharenko, E ;
Fréty, N ;
Nabias, G ;
Shepelevich, VG ;
Tedenac, JC .
JOURNAL OF CRYSTAL GROWTH, 2000, 209 (04) :773-778
[8]  
MIROSHNICHENKO IS, 1982, LIQUID QUENCHING, P166
[9]  
Naletov V. L., 1992, P 3 INT WORKSH THERM, P22
[10]  
ROWE DM, 1983, MODERN THERMOELECTRI, P103