GaAs and InP nanohole arrays fabricated by reactive beam etching using highly ordered alumina membranes

被引：75

作者：

Nakao, M

Oku, S

Tamamura, T

Yasui, K

Masuda, H

机构：

[1] NTT, Optoelect Labs, Atsugi, Kanagawa 2430198, Japan

[2] Tokyo Metropolitan Univ, Fac Engn, Dept Appl Chem, Tokyo 1920300, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 2B期

关键词：

porous alumina membrane; hole array; RBE mask; GaAs; InP; 2-D photonic crystal;

D O I：

10.1143/JJAP.38.1052

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly ordered anodic porous alumina was used as a mask for a reactive beam etching (RBE) to transform the nano channel pattern into III-V semiconductors. The alumina mask showed high tolerance to RBE using a Br-2/N-2 mixed gas system. GaAs and InP nanohole arrays with a high aspect ratio and with diameter uniformity of 2% which was as good as that of the alumina mask, were obtained.

引用

页码：1052 / 1055

页数：4

共 14 条

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