CO-gas-induced resistance switching in SnO2/ultrathin Pt sandwich structure

被引：10

作者：

Galdikas, A

Mironas, A

Senuliene, D

Setkus, A

机构：

[1] Semiconductor Sensors Laboratory, Semiconductor Physics Institute, LT-2600 Vilnius

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1996年 / 32卷 / 02期

关键词：

thin metal gas sensors; multilayer structures; steplike resistance response; SENSOR ARRAYS; FILM;

D O I：

10.1016/0925-4005(96)80115-8

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

A novel sandwich structure based on an insulating metal oxide top layer and an ultrathin metal bottom layer is proposed. The experiments are carried out on a model structure consisting of thin films of Pt and SnO2. A resistance switching effect induced by CO gas is obtained in these sandwich structures. The effect is proved to originate from the properties of the ultrathin Pt film The large amplitude of the effect is related to the tin oxide top layer. Some features of the switching effect are discussed on the basis of the proposed model.

引用

页码：87 / 92

页数：6

共 11 条

[1]

ASHCROFT NW, 1976, SOLID STATE PHYS, P647

[2] CARRIER TRANSPORT THROUGH GRAIN-BOUNDARIES IN SEMICONDUCTORS [J].