Raman-scattering study of the InGaN alloy over the whole composition range -: art. no. 013511

被引：95

作者：

Hernández, S

Cuscó, R

Pastor, D

Artús, L

O'Donnell, KP

Martin, RW

Watson, IM

Nanishi, Y

Calleja, E

机构：

[1] Univ Strathclyde, Dept Phys, Glasgow G4 0NG, Lanark, Scotland

[2] CSIC, Inst Jaume Almera, Barcelona 08028, Spain

[3] Univ Strathclyde, Inst Photon, Glasgow G4 0NW, Lanark, Scotland

[4] Ritsumeikan Univ, Dept Photon, Kusatsu 5258577, Japan

[5] Univ Politecn Madrid, Escuela Tecn Super Ingn ETSI Telecommun, Inst Sistemas Optoelect & Microtecnol, E-28040 Madrid, Spain

[6] Univ Politecn Madrid, Escuela Tecn Super Ingn ETSI Telecommun, Dept Ingn Elect, E-28040 Madrid, Spain

来源：

JOURNAL OF APPLIED PHYSICS | 2005年 / 98卷 / 01期

关键词：

D O I：

10.1063/1.1940139

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present Raman-scattering measurements on InxGa1-xN over the entire composition range of the alloy. The frequencies of the A(1)(LO) and E-2 modes are reported and show a good agreement with the one-mode behavior dispersion predicted by the modified random-element isodisplacement model. The A(1)(LO) mode displays a high intensity relative to the E-2 mode due to resonant enhancement. For above band-gap excitation, the A(I)(LO) peak displays frequency shifts as a function of the excitation energy due to selective excitation of regions with different In contents, and strong multiphonon scattering up to 3LO is observed in outgoing resonance conditions. (c) 2005 American Institute of Physics.

引用

页数：5

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