Studies of switching kinetics in ferroelectric thin films

被引:40
作者
Jiang, A
Dawber, M
Scott, JF
Wang, C
Migliorato, P
Gregg, M
机构
[1] Univ Cambridge, Dept Earth Sci, Symetrix Ctr Ferroics, Cambridge CB2 3EQ, England
[2] Acad Sinica, Inst Solid State Phys, Hefei 230031, Peoples R China
[3] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England
[4] Queens Univ Belfast, Sch Math & Phys, Condensed Matter Phys & Mat Sci Res Div, Belfast BT7 1NN, Antrim, North Ireland
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2003年 / 42卷 / 11期
关键词
ferroelectrics; thin films; lead zirconate-titanate; barium-strontium titanate; strontium bismuth tantalate; dielectric constants;
D O I
10.1143/JJAP.42.6973
中图分类号
O59 [应用物理学];
学科分类号
摘要
Experimental studies are reported concerning the importance of interfacial capacitance (including electrode screening, space-charge layers, and/or chemically discrete dead layers). on domain switching behaviour in thin films of ferroelectric lead zirconate-titanate (PZT), strontium bismuth tantalate (SBT), and barium strontium titanate (BST). Emphasis is placed upon studies at applied field values very near the coercive field E, asymmetry in fatigue for positive and negative polarity coercive fields, and in the case of BST, of the coexistence of ferroelectric and paraelectric phases Studies of dielectric loss show important correlations between tan 6 and fatigue (polarization decrease) as a function of bipolar switching cycles N. This is a priori not obvious, since the former is a linear response and the latter, a nonlinear response. Modelling of enlarged interfacial,space-charge layers in PZT films and chemically distinct dead (paraelectric) layers in BST films shows contradictory tendencies of coercive-voltage changes with the growth of passive layers.
引用
收藏
页码:6973 / 6982
页数:10
相关论文
共 48 条
[1]   Voltage shift phenomena in a heteroepitaxial BaTiO3 thin film capacitor [J].
Abe, K ;
Yanase, N ;
Yasumoto, T ;
Kawakubo, T .
JOURNAL OF APPLIED PHYSICS, 2002, 91 (01) :323-330
[2]   Voltage offsets and imprint mechanism in SrBi2Ta2O9 thin films [J].
AlShareef, HN ;
Dimos, D ;
Warren, WL ;
Tuttle, BA .
JOURNAL OF APPLIED PHYSICS, 1996, 80 (08) :4573-4577
[3]   FATIGUE CHARACTERISTICS OF SOL-GEL DERIVED PB(ZR, TI)O-3 THIN-FILMS [J].
AMANUMA, K ;
HASE, T ;
MIYASAKA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5211-5214
[4]   Low-frequency dielectric dispersion in ferroelectric crystals [J].
Araujo, JF ;
Mendes, J ;
Melo, FEA ;
Letelier, FV ;
Chaves, AS .
PHYSICAL REVIEW B, 1998, 57 (02) :783-788
[5]   Granulation, Phase Change, and Microstructure - Kinetics of Phase Change. III [J].
Avrami, M .
JOURNAL OF CHEMICAL PHYSICS, 1941, 9 (02) :177-184
[6]   Kinetics of phase change I - General theory [J].
Avrami, M .
JOURNAL OF CHEMICAL PHYSICS, 1939, 7 (12) :1103-1112
[7]  
Avrami M., 1940, J CHEM PHYS, V8, P212
[8]   Slow capacitance relaxation in (BaSr)TiO3 thin films due to the oxygen vacancy redistribution [J].
Boikov, YA ;
Goltsman, BM ;
Yarmarkin, VK ;
Lemanov, VV .
APPLIED PHYSICS LETTERS, 2001, 78 (24) :3866-3868
[9]   Reversible and irreversible domain wall contributions to the polarization in ferroelectric thin films [J].
Bolten, D ;
Lohse, O ;
Grossmann, M ;
Waser, R .
FERROELECTRICS, 1999, 221 (1-4) :251-257
[10]   Reversible and irreversible processes in donor-doped Pb(Zr,Ti)O3 [J].
Bolten, D ;
Böttger, U ;
Schneller, T ;
Grossmann, M ;
Lohse, O ;
Waser, R .
APPLIED PHYSICS LETTERS, 2000, 77 (23) :3830-3832