InP 1.3 μm microcavity LEDs with high quantum efficiency

被引：2

作者：

Depreter, B ^{[1
]}

Moerman, I ^{[1
]}

Baets, R ^{[1
]}

Van Daele, P ^{[1
]}

Demeester, P ^{[1
]}

机构：

[1] State Univ Ghent, Dept Informat Technol, IMEC, B-9000 Ghent, Belgium

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 221卷 / 1-4期

关键词：

MOVPE; InP; LED; microcavity;

D O I：

10.1016/S0022-0248(00)00798-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on the growth and the fabrication of InP-based microcavity light-emitting diodes (MCLEDs) operating at 1300 nm wavelength. Thus far, the MCLED concept was mainly used in the GaAs material system. Due to the reduced refractive index contrast available in the InP material system, a transfer to longer wavelengths is certainly not straightforward. The transition from the ternary AlGaAs to the quaternary InGaAsP system poses an additional growth-technical challenge. First, results of our 1300nm MCLEDs indicate excellent output power and high fiber-coupling efficiency. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：674 / 678

页数：5

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