Effect of thermal expansion coefficient on the temperature dependence of the band gap in CuInTe2

被引：8

作者：

Rincon, C ^{[1
]}

Wasim, SM ^{[1
]}

Marin, G ^{[1
]}

机构：

[1] Univ Los Andes, Fac Ciencias, Dept Fis, CES, Merida 5251, Venezuela

来源：

MATERIALS LETTERS | 1998年 / 36卷 / 5-6期

关键词：

semiconductors; ternary chalcopyrite; CuInTe2; energy gap shift; solar cells;

D O I：

10.1016/S0167-577X(98)00041-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The temperature dependence of the energy gap in single crystals of CuInTe2 has been analyzed by considering separately the contributions due to thermal expansion and electron-phonon interaction. For the first contribution we use a term that explicitly takes into account the temperature variation of the thermal expansion coefficient and the pressure variation of the band gap. Far the electron-phonon interaction, a statistical factor for phonons with an average temperature Theta is employed. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：245 / 248

页数：4

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