Stretchable Graphene: A Close Look at Fundamental Parameters through Biaxial Straining

被引：313

作者：

Ding, Fei ^{[1
,3
]}

Ji, Hengxing ^{[1
]}

Chen, Yonghai ^{[3
]}

Herklotz, Andreas ^{[2
]}

Doerr, Kathrin ^{[2
]}

Mei, Yongfeng ^{[1
]}

Rastelli, Armando ^{[1
]}

Schmidt, Oliver G. ^{[1
]}

机构：

[1] IFW Dresden, Inst Integrat Nanosci, D-01069 Dresden, Germany

[2] IFW Dresden, Inst Metall Mat, D-01069 Dresden, Germany

[3] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

NANO LETTERS | 2010年 / 10卷 / 09期

关键词：

Graphene; strain engineering; Gruneisen parameters; Raman spectroscopy; piezoelectric actuator; RAMAN-SPECTROSCOPY; MONOLAYER; SUBSTRATE; TRANSPORT;

D O I：

10.1021/nl101533x

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Tunable biaxial stresses, both tensile and compressive, are applied to a single layer graphene by utilizing piezoelectric actuators. The Gruneisen parameters for the phonons responsible for the D, G, 2D and 2D' peaks are studied. The results show that the D peak is composed of two peaks, unambiguously revealing that the 2D peak frequency (omega(2D)) is not exactly twice that of the D peak (omega(D)). This finding is confirmed by varying the biaxial strain of the graphene, from which we observe that the shift of omega(2D)/2 and omega(D) are different. The employed technique allows a detailed study of the interplay between the graphene geometrical structures and its electronic properties.

引用

页码：3453 / 3458

页数：6

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