Cu(In,Ga)Se2 thin-film solar cells with an efficiency of 18%

被引：93

作者：

Negami, T ^{[1
]}

Hashimoto, Y ^{[1
]}

Nishiwaki, S ^{[1
]}

机构：

[1] Matsushita Elect Ind Co Ltd, Adv Technol Res Labs, Seika, Kyoto 6190237, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2001年 / 67卷 / 1-4期

关键词：

Cu(In; Ga)Se-2; thin film; electric property;

D O I：

10.1016/S0927-0248(00)00300-7

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

An efficiency of over 18% have been achieved in Cu(In,Ga)Se, (CIGS) thin-film solar cells. Solar cell parameters were estimated for the cells with efficiencies of more and less than 18%. A diode quality factor n and forward current (saturated current) J(0) of the cell with over 18% efficiency are lower than those with below 18% efficiency. This would be attributed to sufficient coverage of the CdS film with excellent uniformity as a buffer and/or window layer over the CIGS film because the process of CdS film formation was improved. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：331 / 335

页数：5

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