Temperature and partial oxygen pressure role on the electrical conductivity of Bi12Ti0.7Ga0.3O20 single crystal

被引：7

作者：

Lanfredi, S

Carvalho, JF

Hernandes, AC

机构：

[1] Univ Sao Paulo, Inst Fis Sao Carlos, BR-13560970 Sao Carlos, SP, Brazil

[2] Univ Fed Goias, Inst Fis, BR-94001970 Goiania, Go, Brazil

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 26期

关键词：

D O I：

10.1063/1.1336165

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical conduction properties of Bi12Ti0.7Ga0.3O20 (BTGaO) single crystal was investigated by impedance spectroscopy. The measurements were performed in the range of 100-400 degreesC and in a frequency range of 5-1.3x10(7) Hz. The effect of partial oxygen pressure on the electric conductivity was investigated from 1 to 10(-6) atm. The data are presented in a Nyquist diagram plot, from which the electric resistance was determined. The electric conductivity follows the Arrhenius law, with an activation energy of 0.55 eV. The change in conductivity caused by oxygen pressure showed that BTGaO is a p-type semiconductor, according to the relation sigma alpha PO2+1/4. The dielectric constant value was equal to 50. The dielectric behavior of BTGaO does not depend on the temperature and the partial oxygen pressure. (C) 2000 American Institute of Physics. [S0003- 6951(01)03201-6].

引用

页码：4371 / 4373

页数：3

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