A CMOS power amplifier with power control and T/R switch for 2.45-GHz Bluetooth/ISM band applications

被引：18

作者：

Khannur, PB ^{[1
]}

机构：

[1] Inst Microelect, Singapore 117685, Singapore

来源：

2003 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2003年

关键词：

D O I：

10.1109/RFIC.2003.1213913

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The design and performance of a 2.45-GHz power amplifier with 3-bit digital power control (30-dB control in 5-dB step) and T/R switch for 2.45-GHz Bluetooth and ISM band applications using 0.18-mum, single-poly six-metal standard CMOS process with thick top-metal (2-mum) and metal-insulator-metal (MIM) capacitor option are presented in this paper. The proposed design uses single-stage Class-AB topology for the power amplifier. In-house extracted models were used for active and passive components to achieve success on silicon for the first time. The power output is +3.5 dBm at 2.45-GHz after the T/R switch. The drain efficiency is 16% including insertion loss of the T/R switch. The circuit operates from a single 1.8V +/- 10% supply and draws total drain current of 8 mA. The operating temperature range is from -40degreesC to +85degreesC.

引用

页码：145 / 148

页数：4