Enhancement of photoelectrochemical response by aligned nanorods in ZnO thin films

被引：108

作者：

Ahn, Kwang-Soon ^{[1
]}

Shet, Sudhakar ^{[1
]}

Deutsch, Todd ^{[1
]}

Jiang, Chun-Sheng ^{[1
]}

Yan, Yanfa ^{[1
]}

Al-Jassim, Mowafak ^{[1
]}

Turner, John ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

JOURNAL OF POWER SOURCES | 2008年 / 176卷 / 01期

关键词：

ZnO nanorod; gas ambient; photoelectrochemical; crystallinity; bandgap; sputter;

D O I：

10.1016/j.jpowsour.2007.10.034

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

ZnO thin films are deposited in pure Ar and mixed Ar and N-2 gas ambient at various substrate temperatures by rf sputtering ZnO targets. We find that the deposition in pure Ar ambient leads to polycrystalline ZnO thin films. However, the presence of N-2 in the deposition ambient promotes the formation of aligned nanorods at temperatures above 300 degrees C. ZnO films with aligned nanorods deposited at 500 degrees C exhibit significantly enhanced photoelectrochemical response, compared to polycrystalline ZnO thin films grown at the same temperature. Our results suggest that aligned nanostructures may offer potential advantages for improving the efficiency of photoclectrochemical water-splitting for H-2 production. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：387 / 392

页数：6

共 26 条

[1] The effect of thermal annealing on photoelectrochemical responses of WO3 thin films [J].