Study on electrical characteristics of metal/boron nitride/metal and boron nitride/silicon structures

被引：38

作者：

Kimura, C ^{[1
]}

Yamamoto, T ^{[1
]}

Sugino, T ^{[1
]}

机构：

[1] Osaka Univ, Dept Elect Engn, Suita, Osaka 5650871, Japan

来源：

关键词：

boron nitride; metal/BN/metal structure; Schottky barrier height; BN/Si diode;

D O I：

10.1016/S0925-9635(00)00509-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polycrystalline boron nitride films are synthesized by plasma-assisted chemical vapor deposition (PA-CVD). Metal/BN/metal samples are fabricated and electrical characterization are performed for metal (Ni,Cu,Ti)/BN contacts. Ni/BN contact can be regarded as an ohmic property. However, Cu/BN and Ti/BN contacts show Schottky characteristics. For the Ti/BN sample, Schottky barrier height as high as 1 eV is achieved. It is found that the BN films show p-type conduction from the relationship between Schottky barrier height and metal work function. Also fabricated is a Ni/BN/n-Si diode, current-voltage (I-V) characteristics of which demonstrate a rectification ratio as high as 10(5). (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：1404 / 1407

页数：4

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