Doping of 6H-SiC by selective diffusion of boron

被引：22

作者：

Soloviev, SI ^{[1
]}

Gao, Y ^{[1
]}

Sudarshan, TS ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 24期

关键词：

D O I：

10.1063/1.1329328

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Experimental evidence of selective boron doping of 6H-SiC via diffusion is given. Selective diffusion has been realized at 1800-2100 degreesC using graphite film as a protecting mask. Cathodoluminescence measurements as well as an anodic oxidation technique have been employed to identify the local doped regions. In addition, a diffused planar p-n diode based on the local p-type emitter region was fabricated. The ideality factor extracted from current-voltage characteristics was 1.97, which indicates that the Shockley-Hall-Read recombination is the dominant mechanism in the conduction region. The value of breakdown voltage for this diode measured at room temperature was a little greater than 800 V, and a leakage current density of 5.7x10(-6) A/cm(2) at 800 V was achieved. (C) 2000 American Institute of Physics. [S0003-6951(00)05148-2].

引用

页码：4004 / 4006

页数：3

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