Photoluminescence of mechanically polished ZnO

被引：36

作者：

Hamby, DW ^{[1
]}

Lucca, DA ^{[1
]}

Klopfstein, MJ ^{[1
]}

机构：

[1] Oklahoma State Univ, Sch Mech & Aerosp Engn, Stillwater, OK 74078 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2005年 / 97卷 / 04期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1840102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of mechanical polishing on the photoluminescence (PL) from each polar face of wurtzite-structure ZnO are presented. Differences observed for the 4.2 K PL of a mechanically polished surface when compared to that of a chemomechanically polished surface include broadened bound-exciton peaks, hot-exciton luminescence, and a donor-acceptor pair peak at 3.2108 eV. Analysis of this donor-acceptor pair peak results in estimated donor and acceptor ionization energies of 52+/-10 and 230+/-10 meV, respectively, with a mean separation distance between pairs of approximately 3-4 nm. The donors and acceptors are attributed to point defects introduced by dislocation motion during the polishing process and identified as octahedral Zn interstitials and Zn vacancies, respectively. (C) 2005 American Institute of Physics.

引用

页数：8

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