Zeolite LTA deposition on silicon wafer

The deposition of zeolite LTA layer on silicon wafer, from homogeneous synthesis systems, trough the seeding method, has been systematically investigated and high quality, oriented zeolite films are obtained. Basically the seeding method consists in various steps. In the first step the support surface is modified in order to promote the adhesion of presynthesized colloidal zeolite seeds, oppositely charged. The seeded support is then hydrothermally treated in the same synthesis solution to allow the growth of zeolite seeds into a dense film. In this work it was shown that the ageing of the synthesis solution before zeolite crystallization process, sensibly affects both size, amount and formation kinetics of the zeolite LTA crystals deposited on the seeded silicon surface.