Gadolinium silicate gate dielectric films with sub-1.5 nm equivalent oxide thickness

被引：85

作者：

Gupta, JA ^{[1
]}

Landheer, D ^{[1
]}

McCaffrey, JP ^{[1
]}

Sproule, GI ^{[1
]}

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 12期

关键词：

D O I：

10.1063/1.1356725

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GdSi(x)O(y) gate dielectric films were deposited on Si(001) substrates using ultra-high-vacuum electron-beam evaporation from pressed-powder targets. Transmission electron microscopy showed that the films were amorphous as deposited and remained amorphous when annealed to temperatures up to 900 degreesC. Capacitance-voltage measurements indicate an equivalent oxide thickness (EOT) of 13.4 Angstrom for a film with composition GdSi(0.56)O(2.59) determined by in situ x-ray photoelectron emission spectroscopy. After forming gas annealing at 500 degreesC the EOT was reduced to 11.0 Angstrom, at a physical thickness of 45 Angstrom. The same film has a low leakage current of approximately 5.7 x 10(-3) Angstrom cm(-2) at +1 V, a reduction of 8.7 x 10(4) compared to current density estimates of SiO(2) films with the same specific capacitance. (C) 2001 American Institute of Physics.

引用

页码：1718 / 1720

页数：3

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