Performance improvement of n-MOSFETs with constituent gradient WO2/SiO2 interface

被引：6

作者：

Iwamoto, K

Ogawa, A

Nabatame, T

Satake, H

Toriumi, A

机构：

[1] ASET, MIRAI Project, Tsukuba, Ibaraki 3058569, Japan

[2] AIST, ASRC, MIRAI Project, Tsukuba, Ibaraki 3058569, Japan

来源：

MICROELECTRONIC ENGINEERING | 2005年 / 80卷

关键词：

high-k dielectrics; HfO2; SiO2; gate leakage current; effective electron mobility;

D O I：

10.1016/j.mee.2005.04.073

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated an influence of the constituent gradient interfacial layer (CG-IL) between HfO2 and SiO2 on the electrical characteristics of high-k MOSFETs. The CG-IL structure was successfully grown by the newly developed layerby-layer deposition and annealing (LL-D&A) technique. The dielectric constant of the CG-lL was higher than that of SiO2-IL, because Hf atoms were diffused into the underlying SiO2 layer and Si-O-Hf bonds were formed. Furthermore, the CG-IL structure can significantly reduce the scattering center which is considered to exist at the HfO2/SiO2 interface, and thus improve the effective electron mobility. We consider that the CG-IL structure is useful to improve the electrical characteristics of n-MOSFETs with HfO2 films.

引用

页码：202 / 205

页数：4