Suppression of lateral fluctuations in CdSe-based quantum wells

被引：9

作者：

Kurtz, E

Schmidt, M

Baldauf, M

Wachter, S

Grün, M

Kalt, H

Klingshirn, C

Litvinov, D

Rosenauer, A

Gerthsen, D

机构：

[1] Univ Karlsruhe, Inst Angew Phys, D-76128 Karlsruhe, Germany

[2] Univ Karlsruhe, Lab Elektronenmikroskopie, D-76128 Karlsruhe, Germany

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 08期

关键词：

D O I：

10.1063/1.1394172

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a reduction of inhomogeneous broadening in CdSe-related quantum wells in ZnSe by employing a growth technique that uses a CdS-compound source instead of the standard Cd elemental source for molecular-beam epitaxy. Assisted by the low sticking coefficient of sulfur and possibly an exchange reaction between S and Se, only a small S contamination is observed. A comparison with standard layers reveals an increase in quality and homogeneity by a strong reduction of the photoluminescence (PL) linewidth. Samples obtained by our method show extremely little lateral confinement as indicated by a lack of sharp single dot emission lines in micro PL and the absence of the extensive redshift observed in temperature dependent PL of fluctuating well potentials. (C) 2001 American Institute of Physics.

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页码：1118 / 1120

页数：3

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