Substrate dependence of the superfluid onset of 4He films

被引：11

作者：

Csáthy, GA ^{[1
]}

Chan, MHW ^{[1
]}

机构：

[1] Penn State Univ, Dept Phys, University Pk, PA 16802 USA

来源：

JOURNAL OF LOW TEMPERATURE PHYSICS | 2000年 / 121卷 / 5-6期

关键词：

D O I：

10.1023/A:1017566116961

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have performed torsional oscillator measurements of He-4 films adsorbed on porous gold and gold preplated with Ar, Ne, D-2, HD, and H-2. On all substrates, the superfluid response is similar. The thickness of the non-superfluid layer as function of the substrate, however, increases monotonically with the well depth of the atom-substrate interaction potential.

引用

页码：451 / 458

页数：8

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