Gate dielectrics for organic field-effect transistors: New opportunities for organic electronics

被引:937
作者
Facchetti, A
Yoon, MH
Marks, TJ
机构
[1] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA
[2] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA
关键词
D O I
10.1002/adma.200500517
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In this contribution we review the motivations for, and recent advances in, new gate dielectric materials for incorporation into organic thin-film transistors (OTFTs) for organic electronics. After a general introduction to OTFT materials, operating principles, and processing requirements for optimizing low-cost organic electronics, this review focuses on three classes of OTFT-compatible dielectrics: i) inorganic (high-k) materials; ii) polymeric materials; and iii) self-assembled mono- and/multilayer materials. The principal goals in this active research area are tunable and reduced OTFT operating voltages, leading to decreased device power consumption while providing excellent dielectric/insulator properties and efficient low-cost solution-phase processing characteristics.
引用
收藏
页码:1705 / 1725
页数:21
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