High rate deposition of ta-C:H using an electron cyclotron wave resonance plasma source

被引:55
作者
Morrison, NA [1 ]
Rodil, SE [1 ]
Ferrari, AC [1 ]
Robertson, J [1 ]
Milne, WI [1 ]
机构
[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England
关键词
electron cyclotron wave resonance; tetrahedral amorphous carbon; high rate deposition;
D O I
10.1016/S0040-6090(98)01187-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A compact electron cyclotron wave resonance (ECWR) source has been developed for the high rate deposition of hydrogenated tetrahedral amorphous carbon (ta-C:H). The ECWR provides growth rates of up to 1.5 nm/s over a 4-inch diameter and an independent control of the deposition rate and ion energy. The ta-C:H was deposited using acetylene as the sourer gas and was characterized as having an sp(3) content of up to 77%, plasmon energy of 27 eV, refractive index of 2.45, hydrogen content of about 30%, optical gap of up to 2.1 eV and RMS surface roughness of 0.04 nm. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:71 / 73
页数:3
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