Thermally induced strain in MBE grown GaN layers

被引:6
作者
Heinke, H [1 ]
Kirchner, V [1 ]
Einfeldt, S [1 ]
Birkle, U [1 ]
Hommel, D [1 ]
机构
[1] Univ Bremen, Inst Solid State Phys, D-28334 Bremen, Germany
关键词
thermally induced strain; thermal expansion; GaN; high resolution X-ray diffraction;
D O I
10.1016/S0022-0248(98)00316-9
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
A study of thermally induced strain in GaN layers grown on c-plane sapphire by molecular beam epitaxy is presented. For this, high-resolution X-ray diffraction at variable temperature (10-630 K) has been used, which is the most direct method to investigate this strain. A linear change of the lattice constant was observed for a 3 mu m thick GaN layer for temperatures above 300 K which is characterized by a thermal expansion coefficient of 3.8 x 10(-6) K-1. In contrast to this, the thermal expansion was found to be negligible for temperatures below 100 K. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:375 / 379
页数:5
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