Issues in emissivity of silicon

被引：2

作者：

Abedrabbo, S ^{[1
]}

Hensel, JC ^{[1
]}

Gokce, OH ^{[1
]}

Tong, FM ^{[1
]}

Sopori, B ^{[1
]}

Fiory, AT ^{[1
]}

Ravindra, NM ^{[1
]}

机构：

[1] New Jersey Inst Technol, Newark, NJ 07102 USA

来源：

RAPID THERMAL AND INTEGRATED PROCESSING VII | 1998年 / 525卷

关键词：

D O I：

10.1557/PROC-525-95

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The first qualitative results of the effects of backside surface roughness on the radiative properties of silicon as a function of temperature in the wavelength range of 1-20 mu m are presented in this study. These measurements have been made utilizing a spectral emissometer operating at near- and mid-IR spectral range. Surface roughness of the silicon wafer has been observed to lead to increased emissivities.

引用

页码：95 / 102

页数：8