High-temperature semiconductor gas sensors

被引:13
作者
Bene, R
Pintér, Z
Perczel, IV
Fleischer, M
Réti, F
机构
[1] Budapest Univ Technol & Econ, Dept Atom Phys, H-1111 Budapest, Hungary
[2] Siemens AG, ZTKM 2, D-87739 Munich, Germany
关键词
gas sensor; acetone; oxide semiconductor;
D O I
10.1016/S0042-207X(01)00129-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work, the sensitivity of three sensor materials (SrTiO3, CeO2, Ga2O3) for acetone was studied in the 25-850 degreesC temperature range, by a Quadrupole Mass Spectrometer coupled DC sensor tester, planned and built in our laboratory. This set-up is suitable to measure the sensor resistance and to analyse the surrounding gas atmosphere at the same time. The results show that all sensor samples are sensitive to acetone and they have a material-dependent sensitivity maximum as a function of the temperature. The highest sensitivity was obtained for Ga2O3, around 550 degreesC. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:275 / 278
页数:4
相关论文
共 7 条
[1]   Application of quadrupole mass spectrometer for the analysis of near-surface gas composition during DC sensor-tests [J].
Bene, R ;
Kiss, G ;
Perczel, IV ;
Meyer, FA ;
Reti, F .
VACUUM, 1998, 50 (3-4) :331-337
[2]   Integrated mass spectrometer-microreactor system for the in situ investigation of oxide semiconductor sensors [J].
Bene, R ;
Hars, G ;
Perczel, IV ;
Reti, F .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1998, 69 (09) :3314-3319
[3]  
CAPONE S, 1999, EUROSENSORS 13 HAGUE
[4]   Fast gas sensors based on metal oxides which are stable at high temperatures [J].
Fleischer, M ;
Meixner, H .
SENSORS AND ACTUATORS B-CHEMICAL, 1997, 43 (1-3) :1-10
[5]  
GERBLINGER L, 1993, APPL PHYS, P7453
[6]  
HOHWASSER W, 1994, J APPL PHYS, V74, P3991
[7]  
VARHEGYI E, 1997, EUROSENSORS 11 WARSH