Structural and magnetic properties of MnAs nanoclusters formed by Mn ion implantation in GaAs

被引:6
作者
Serres, A
Benassayag, G
Respaud, M
Armand, C
Pesant, JC
Mari, A
Liliental-Weber, Z
Claverie, A
机构
[1] CNRS, CEMES, F-31055 Toulouse 4, France
[2] Inst Natl Sci Appl, LPMC, F-31077 Toulouse, France
[3] Inst Natl Sci Appl, F-31077 Toulouse, France
[4] CNRS, IEMN, F-59652 Villeneuve Dascq, France
[5] CNRS, LCC, F-31077 Toulouse, France
[6] Lawrence Berkeley Lab, MSD, Berkeley, CA 94720 USA
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2003年 / 101卷 / 1-3期
关键词
nanoclusters; ferromagnetism; magnetization; semi-conductor;
D O I
10.1016/S0921-5107(02)00676-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ferromagnetic (FM) nanostructures embedded in semiconductors are attracting interest because their physical properties could be used in new devices such as memories, sensors or more generally involving "spintronics". In this work, we present results on the synthesis and the characterization of nanosized MnAs ferromagnets buried in GaAs. These nanocrystals can be formed either by single Mn implantation or by Mn +As co-implantation at room temperature into GaAs wafers followed by thermal annealing. High-resolution transmission electron microscopy and diffraction analysis show that the MnAs precipitates exhibit the regular hexagonal structure with a 3m orientation relationship with respect to the matrix. The mean diameters of the nanocrystals range from 9 to 13 nm depending on the annealing conditions. Magnetization measurements by superconducting quantum interference device magnetometry reveal an FM state. Upon warming, a progressive transition to a superparamagnetic state is evidenced, probably due to the distribution of individual blocking temperatures, resulting both from the size distribution of the nanocrystals and from dipolar interactions. Curie temperatures in the range of 360 K are measured, significantly higher than for bulk MnAs. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:119 / 123
页数:5
相关论文
共 11 条
[1]  
CEHN C, 2000, J APPL PHYS, V5636, P87
[2]  
CHATILLON C, 1995, J CRYST GROWTH, V91, P151
[3]   STRUCTURE AND ORIENTATION OF AS PRECIPITATES IN GAAS GROWN AT LOW-TEMPERATURE BY MOLECULAR-BEAM EPITAXY [J].
CLAVERIE, A ;
LILIENTALWEBER, Z .
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1992, 65 (04) :981-1002
[4]  
DEBOECK J, 1996, J MAGN MAGN MATER, V148, P156
[5]  
DEBOECK J, 1996, APPL PHYS LETT, V2744, P68
[6]  
NEEL L, 1949, ANN GEOPHYS, V99, P5
[7]  
OHNO H, 1996, APPL PHYS LETT, V363, P69
[8]  
SHI J, 1997, J APPL PHYS, V4331, P81
[9]  
WELLMANN PJ, 1998, APPL PHYS LETT, V3291, P73
[10]  
WELLMANN PJ, 1997, APPL PHYS LETT, V2532, P71