Preparation and characteristic study of MOD derived dielectric SrZrO3 thin films

被引：7

作者：

Chen, CH ^{[1
]}

Zhu, WG ^{[1
]}

Chen, XF ^{[1
]}

Yu, T ^{[1
]}

Yao, X ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Ctr Microelect, Singapore 639798, Singapore

来源：

FERROELECTRICS | 2003年 / 292卷

关键词：

SrZrO3 thin films; optical band gap; dielectric properties;

D O I：

10.1080/00150190390222781

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report in this paper our success in preparation of dielectric SrZrO3 thin films on Pt/Ti/SiO2 /Si substrates using wet chemical metallo-organic decomposition (MOD) technique and systematic characterizations in their structural development, optical band gap, and dielectric properties. The results of UV optical reflection spectroscopic measurement show the optical band gaps of these films are larger than 5.50 eV, which meets the requirement for the high-K CMOS application. These films exhibit very low leakage current density and high breakdown strength, such as the film annealed at 600degreesC has its low leakage current density of 4.2 x 10(-10) A/cm(2) at the field strength of 580 kV/cm. The MOD derived SrZrO3 thin films also have their dielectric constants higher than 22.0 with very little dispersion in a frequency range from 100 to 1 M Hz.

引用

页码：29 / 33

页数：5

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