Electronic transition energy Eii for an isolated (n,m) single-wall carbon nanotube obtained by anti-Stokes/Stokes resonant Raman intensity ratio -: art. no. 241404

被引：86

作者：

Souza, AG ^{[1
]}

Jorio, A

Hafner, JH

Lieber, CM

Saito, R

Pimenta, MA

Dresselhaus, G

Dresselhaus, MS

机构：

[1] MIT, Dept Phys, Cambridge, MA 02139 USA

[2] Univ Fed Ceara, Dept Fis, BR-60455760 Fortaleza, Ceara, Brazil

[3] Harvard Univ, Dept Chem, Cambridge, MA 02138 USA

[4] Univ Electrocommun, Dept Elect Engn, Tokyo 1828585, Japan

[5] Univ Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil

[6] MIT, Francis Bitter Natl Magnet Lab, Cambridge, MA 02139 USA

[7] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA

来源：

PHYSICAL REVIEW B | 2001年 / 63卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.63.241404

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A resonant Raman study of the anti-Stokes and Stokes spectra for individual isolated single-wall carbon nanotubes is presented. The observed asymmetry between the anti-Stokes and Stokes spectra is analyzed within the framework of resonant Raman scattering theory, thereby providing a method for accurately determining the transition energy between van Hove singularities E-ii in the electronic density of states and unambiguously assigning the (n,m) nanotube indices. Furthermore, resonant Raman theory allows us to determine whether the resonance is with the incident or scattered photon, and to estimate the relative magnitudes of the matrix elements for the G-band and the radial breathing mode Raman processes.

引用

页数：4

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