At-wavelength detection of extreme ultraviolet lithography mask blank defects

被引：22

作者：

Jeong, ST ^{[1
]}

Idir, M

Lin, Y

Johnson, L

Rekawa, S

Jones, M

Denham, P

Batson, P

Levesque, R

Kearney, P

Yan, PY

Gullikson, E

Underwood, JH

Bokor, J

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Ctr Xray Opt, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Dept EECS, Berkeley, CA 94720 USA

[3] Univ Calif Lawrence Livermore Natl Lab, Livermore, CA 94550 USA

[4] Intel Corp, Santa Clara, CA 95052 USA

[5] Univ Paris Sud, Lab Utilisat Rayonnement Electromagnet, F-91405 Orsay, France

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 06期

关键词：

D O I：

10.1116/1.590473

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the design and operation of an at-wavelength system for extreme ultraviolet lithography mask blank defect detection. Initial results demonstrate sensitivity to submicron size phase defects. The performance of the system is compared with the practical requirements for a mask blank inspection system in terms of the sensitivity and scanning time. (C) 1998 American Vacuum Society.

引用

页码：3430 / 3434

页数：5

共 10 条

[1] Chemical method to increase extreme ultraviolet microchannel-plate quantum efficiency [J].

Hemphill, R ;

Edelstein, J ;

Rogers, D .

APPLIED OPTICS, 1997, 36 (07) :1421-1426

[2] FORMATION OF OPTICAL IMAGES BY X-RAYS [J].

KIRKPATRICK, P ;

BAEZ, AV .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1948, 38 (09) :766-774

[3]

KUBIAK G, 1996, OSA TOPS EXTREME ULT, V4

[4] Minimum critical defects in extreme-ultraviolet lithography masks [J].

Lin, Y ;

Bokor, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (06) :2467-2470

[5]

NGUYEN K, 1996, OSA TOPS EXTREME ULT, V4, P49

[6]

Underwood J. H., 1977, Space Science Instrumentation, V3, P259

[7]

UNDERWOOD JH, 1996, OSA TOPS EXTREME ULT, V4, P162

[8]

UNDERWOOD JH, 1996, REV SCI INSTRUM, V67, P1

[9]

VERNON SP, 1996, OSA TOPS EXTREME ULT, V4

[10]

1993, APPL OPT 1201

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