Polycrystalline BIMGVOX.13 studied by impedance spectroscopy

被引:52
作者
Dygas, JR
Malys, M
Krok, F
Wrobel, W
Kozanecka, A
Abrahams, I
机构
[1] Warsaw Univ Technol, Fac Phys, PL-00662 Warsaw, Poland
[2] Univ London, Dept Chem, Ctr Mat Res, London E1 4NS, England
关键词
polycrystalline oxide ion conductor; BIMEVOX; impedance spectroscopy; charge carrier relaxation; grain boundary polarisation;
D O I
10.1016/j.ssi.2004.12.017
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The impedance of the polycrystalline oxide ion conductor BIMGVOX (Bi2MgxV1- xO5.5-1.5x-delta) for composition x = 0.13 was measured in the frequency range from 10 MHz to 0.01 Hz at temperatures between 20 degrees C and 680 degrees C using an automated set-up which allowed measurements of high impedance. Impedance spectra were analysed by non-linear least squares fitting of equivalent circuit, which models grain interiors conductivity with charge carrier relaxation represented by the Cole-Cole function, grain boundaries resistance with parallel non-ideal capacitance, and impedance of platinum electrodes. Determination of electrical properties of the polycrystalline sample was possible up to about 300 degrees C. At higher temperature, electrode impedance dominated the impedance spectrum and only the total ionic conductivity of the sample could be estimated. Temperature dependence of the intragrain conductivity and charge carrier relaxation was studied as well as of the macroscopic grain boundary conductance and capacitance. Assuming that the onset frequency of increase of the intragrain conductivity is a good estimate of the effective hopping rate, the concentration of charge carriers was found to be independent of temperature. For the average grain size of 10 mu m, the thickness of gain boundaries, estimated based on their capacitance, was about 8 nm. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:2085 / 2093
页数:9
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