Theory of spin hall conductivity in n-doped GaAs -: art. no. 166605

被引：235

作者：

Engel, HA ^{[1
]}

Halperin, BI ^{[1
]}

Rashba, EI ^{[1
]}

机构：

[1] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA

来源：

PHYSICAL REVIEW LETTERS | 2005年 / 95卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.95.166605

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We develop a theory of extrinsic spin currents in semiconductors, resulting from spin-orbit coupling at charged scatterers, which leads to skew-scattering and side-jump contributions to the spin-Hall conductivity. Applying the theory to bulk n-GaAs, without any free parameters, we find spin currents that are in reasonable agreement with experiments.

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页数：4

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