Dielectric relaxation studies on the submicron crystalline La2Mo2O9 oxide-ion conductors

被引:40
作者
Yi, ZG [1 ]
Fang, QF [1 ]
Wang, XP [1 ]
Zhang, GG [1 ]
机构
[1] Chinese Acad Sci, Inst Solid State Phys, Key Lab Internal Frict & Defects Solids, Hefei 230031, Peoples R China
基金
中国国家自然科学基金;
关键词
oxygen ion diffusion; oxide ion conductor; La2Mo2O9; dielectric relaxation; sol-gel processing;
D O I
10.1016/S0167-2738(03)00143-7
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Submicron crystalline La2Mo2O9 bulk samples with grain size of about 0.3 mum were successfully synthesized by sol-gel method and sintering process assisted by phase transformation. In the dielectric measurement, two prominent relaxation peaks with almost the same height (P-d1 at lower-temperature and P-d2 at higher-temperature) are observed in temperature spectrum as well as in frequency spectrum, which are associated with the short-distance diffusion of oxygen vacancies. The activation energies and relaxation times At infinite temperature of these two peaks are deduced as (1.22 ev, 3.3 x 10(-16) s) and (1.35 eV, 5.9 X 10(-16) s), respectively. The DC conductivity of the submicron crystalline samples, which is about 0.02 S/cm. when extrapolated to 800degreesC, is much smaller than that of the macrocrystalline samples. The reciprocal of the peak height for P-d1 peak is linearly proportional to temperature, while that for P-d2 peak is temperature independent. The reason for the co-appearance and the possible relaxation dynamics of the two peaks are discussed. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:117 / 124
页数:8
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