Deep levels induced by high fluence proton irradiation in undoped GaAs diodes

被引：6

作者：

Castaldini, A ^{[1
]}

Cavallini, A ^{[1
]}

Polenta, L ^{[1
]}

Canali, C ^{[1
]}

Nava, F ^{[1
]}

Ferrini, R ^{[1
]}

Galli, M ^{[1
]}

机构：

[1] INFM, Bologna, Italy

来源：

SEMICONDUCTORS FOR ROOM-TEMPERATURE RADIATION DETECTOR APPLICATIONS II | 1997年 / 487卷

关键词：

D O I：

10.1557/PROC-487-447

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Semi-insulating liquid encapsulated Czochralski grown GaAs has been investigated after irradiation at high fluences of high-energy protons. Electron beam induced current observations of scanning electron microscopy evidenced a radiation stimulated ordering. An analysis has been carried out of the deep levels associated with defects as a function of the irradiation fluence, using complementary current transient spectroscopies. By increasing the irradiation fluence, the concentration of the native traps at 0.37 eV together with that of the EL2 defect significantly increases and, at the same time, two new electron traps at 0.15 eV and 0.18 eV arise and quickly increase in density.

引用

页码：447 / 452

页数：6